Organic Semiconductor Gaojie Lu ECE423 Presentation 12-16-2006 1 Outline For Organic Semiconductor Introduction to Organic Semiconductor Relation of Organic Semiconductors to Inorganic Characteristics of Organic Semiconductor Organic Semiconductor Devices Future Applications Summary 2 Introduction to Organic Semiconductor
Introduction to Organic Semiconductor Organic Semiconductors are semiconductors which use organic molecules rather than silicon for their active material. This active material can be composed of a wide variety of molecules Low cost of the technology Compatibility with plastic substances Lower temperature manufacturing (60-120 C) Possible to achieve flexible structures Low voltages, comparable with the performance for solution monitoring and some innovative applications 3
Relation of Organic Semiconductors to Inorganic Also studied for more than 50 years Huge variety of choices for organic molecules for u se in semiconductors Charge transport significantly different Usually comprised of many individual molecules h eld together by Van der Waals forces Many different fabrication techniques on different s ubstrates C60 4 Relation of Organic Semiconductors to Inorganic Cont.
Generally operate under accumulation mode, not inversion mode 5 6 Mobilities of organic semiconductors have improved by five orders of magnitude over the past 15 years. Large research efforts using materials such as thes e led to some of this increase. 7 Organic Semiconductors Device-OLED An organic light-emitting diode (OLED) is a special type of lightemitting diode (LED) in which the emissive layer comprises a thin-film
of certain organic compounds. The emissive electroluminescent layer can include a polymeric substance that allows the deposition of very suitable organic compounds For example, in rows and columns on a flat carrier by using a simple "printing" method to create a matrix of pixels which can emit different colored light. 8 Organic Semiconductors Device-OTFT TFTs are transistors created using thin films, usually of silicon deposit ed on glass. The deposited silicon must be crystallized using laser p
ulses at high temperatures. For organics to compete with a-S:H, their mobility should be greater t han 0.1 cm/V s and their on/off current ratio of greater than 106 OTFTs active layers can be thermally evaporated and deposited at m uch lower temperatures (i.e. 60 C) 9 Organic TFT Tightness Benefits Does not require a glass sub strate as amorphous silicon d oes Low temperature manufactur e Could be made on a piece of plastic
Deposition techniques could reduce costs dramatically Challenges Workarounds for complicatio ns with photoresists Finding organic semiconduct ors with high enough mobiliti es & switching times 10 Future Outlook OTFTs for active-matrix displays Flexible view screens (or anything) New generations of smart cards Organic smart pixels with OLEDs Large-area display electronics Organic semiconductor advances in mobilit
y, switching time, and manufacturing may l ead to many possibilities 11 References
H. E. Katz, Z. Bao, and S. J. Gilat, J. Acc. Chem. Res., vol.34, pp.359, 2001. Nandita Madhavan, Small-molecule organic semiconductors, April 01, 2002. A. Dodabalapur, The future of organic semiconductor devies, Device Research Conference 2000, Conference Digest, pp. 11-14, June 2000.
http://assets.cambridge.org/052182/3307/excerpt/0521823307_excerpt.pdf http://www.aist.go.jp/aist_e/latest_research/2004/20041118/20041118.html  C. D. Dimitrakopoulos and D. J. Mascaro, Organic thin-film transistors: A review of recent advances, IBM J. Res. & Dev. Vol. 45, No. 1, Jan. 2001.  C. Reese, M. Roberts, M. M. Ling and Z. Bao, Organic thin film transistors, materialstoday, pp.20-27, Sept. 2004.  Y. Inoue, et al., Organic Thin-file transistors with high electron mobility based on perfluoropentacene, Japan Society of Applied Physis, Vol. 44, No. 6A pp. 3663-3668, 2005 Gao Z Q, Lee C S, Bello I, Lee S T, Chen R M, Luh T Y, Shi J and Tang C W 1999 Appl. Phys. Lett. 74, 865 Kulkarni A P, Gifford A P, Tonzola C J and Jenekhea S A 2005 Appl. Phys. Lett. 86, 061106-1 Shi J M and Tang C W 2002 Appl. Phys. Lett. 80, 3201 Gebeyehu D, Walzer K, He G, Pfeiffer M, Leo K, Brandt J, Gerhard A, Stssel P and Vestweber H 2005 Synth. Met. 148, 205 Hosokawa C, Higashi H, Nakamura H and Kusumoto T 1995 Appl. Phys. Lett. 67, 3853 Liao C H, Lee M T, Tsai C H and Chen C H 2005 Appl. Phys. Lett. 86, 203507 Wu Y Z, Zheng X Y, Zhu W Q, Sun R G, Jiang X Y, Zhang Z L and Xu S H 2003 Appl. Phys. Lett. 83, 5077 Morin J F, Leclerc M, Ads D and Siove A 2005 Macromol. Rapid Commun. 26, 761 http://www.oea-osc.com/persp_overview.htm
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